In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces

被引：9

作者：

Förster, C ^{[1
]}

Schnabel, F ^{[1
]}

Weih, P ^{[1
]}

Stauden, T ^{[1
]}

Ambacher, O ^{[1
]}

Pezoldt, J ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Zentrum Mikro & Nanotechnol, D-98684 Ilmenau, Germany

来源：

THIN SOLID FILMS | 2004年 / 455卷

关键词：

cleaning; in situ ellipsometry; hydrogen plasma; silicon;

D O I：

10.1016/j.tsf.2003.11.255

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low energy hydrogen-argon plasma was applied to clean silicon (100) surface. In situ spectroscopic ellipsometry in the UV-Vis range was used to characterise the morphology and etching damage in dependence on the substrate temperature. Ex situ atomic force microscopy and in situ reflection high-energy electron diffraction was used to characterise complementary the surface morphology and surface structure. In dependence of the substrate temperature two types of surface morphologies could be classified. Using spectroscopic ellipsometry the optimum conditions for the silicon surface cleaning were determined. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：695 / 699

页数：5

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