Carrier Transport and Stress Engineering in Advanced Nanoscale Transistors From (100) and (110) Transistors To Carbon Nanotube FETs and Beyond

被引：0
|
作者：
Uchida, Ken [1 ]
Saitoh, Masumi [2 ]
Kobayashi, Shigeki [2 ]
机构：
[1] Tokyo Inst Technol, Grad Sch Engn, Dept Phys Elect, Meguro Ku, 2-12-1 Ookayama, Tokyo 1528552, Japan
[2] Toshiba Co Ltd, Ctr Res & Dev, Adv LSI Technol Lab, Tokyo, Japan
来源：
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST | 2008年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Carrier transport in advanced MOSFETs is reviewed. First, electron and hole mobility in (110) MOSFETs are compared with those in (100) MOSFETs. Stress engineering is discussed in terms of energy split and effective mass due to the stress. The optimization of multi-gate MOSFET structure is then considered. As an example of ballistic MOSFETs, the performance and stress engineering of CNT FETs with doped junctions are investigated.
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页码：569 / +
页数：3
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