Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC

被引：0

作者：

Sun, Ruize ^{[1
,2
,3
]}

Liang, Y. C. ^{[2
,3
]}

Yeo, Yee-Chia ^{[2
]}

Zhao, Cezhou ^{[4
]}

Chen, Wanjun ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117580, Singapore

[3] Natl Univ Singapore, Suzhou Res Inst, Suzhou 215123, Peoples R China

[4] Xian Jiaotong Liverpool Univ, Dept Elect & Elect Engn, Suzhou 215123, Peoples R China

来源：

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN; Au-free; DC-DC buck converter; integration; MIS-HEMT;

D O I：

10.1109/ispsd.2019.8757674

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, the GaN power IC platform is developed based on Au-free AlGaN/GaN MIS-HEMTs and a constant-output-ripple all GaN DC-DC buck converter IC is firstly realized with integrated gate driver, pulse width modulation (PWM) feedback control and over-current protection (OCP) circuits. The fabricated all GaN integrated DC-DC buck converter can realize stable 10 V output with constant output ripples when input voltage varies from 15 to 30 V. The output and ripples remain stable with varying load resistance. When subjected to over-current incident, the fabricated power IC can be protected according to desired over-current threshold values. The experiment results have demonstrated the functionality and feasibility of all GaN power ICs in power conversion applications.

引用

页码：271 / 274

页数：4

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