Boosting Electronic Transport in Carbon Nanotubes by Isotopic Disorder

被引:13
|
作者
Vandecasteele, Niels [1 ]
Lazzeri, Michele
Mauri, Francesco
机构
[1] Univ Paris 06, CNRS, IMPMC, IPGP, F-75015 Paris, France
关键词
SCATTERING; CRYSTALS; PHONONS;
D O I
10.1103/PhysRevLett.102.196801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The current-voltage curve of metallic carbon nanotubes (CNTs) displays at high bias a sudden increase of the resistivity due to the scattering of electrons with phonons having an anomalously high population (hot phonons). Here, we show that it is possible to improve the electrical performances of metallic CNTs by (13)C isotope enrichment. In fact, isotopic disorder creates additional channels for the hot-phonon deexcitation, reduces their population and, thus, the nanotube high-bias differential resistance. This is an extraordinary case where disorder improves the electronic transport.
引用
收藏
页数:4
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