A potentiometric immunosensor based on a ZnO field-effect transistor

被引：4
|
作者：
Koike, Kazuto [1 ]
Mukai, Kazuya [1 ]
Onaka, Takayuki [1 ]
Maemoto, Toshihiko [1 ]
Sasa, Shigehiko [1 ]
Yano, Mitsuaki [1 ]
机构：
[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 05期
关键词：
HUMAN-IMMUNOGLOBULIN-G;
D O I：
10.7567/JJAP.53.05FF04
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The characteristics of an aptamer-modified Ta2O5/ZnO field-effect transistor as a prototype label-free immunosensor for the potentiometric electrical detection of immunoglobulin G (IgG) were studied. The Ta2O5/ZnO film was grown on a glass substrate by a facing-target sputtering method. Stable operation in electrolyte solution with a small hysteresis width and a low gate leakage current was realized. The immunosensor exhibited a proportional sensitivity to the logarithmic human IgG concentration in the range of 0.35-23 mu mol dm(-3) with a rapid response time of similar to 15 s. (C) 2014 The Japan Society of Applied Physics
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页数：4
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