Effect of Fe metal on the growth of silicon oxide nanowires

被引：3

作者：

Liu, Wei-long ^{[1
]}

Hsieh, Shu-huei ^{[1
]}

Chen, Ching He ^{[2
]}

Chen, Wen-jauh ^{[3
]}

机构：

[1] Formosa Univ, Dept Mat Sci & Engn, Yunlin 632, China Taipei, Taiwan

[2] Pingtung Univ Sci & Technol, Dept Mat Engn, Pingtung 912, China Taipei, Taiwan

[3] Yunlin Univ Sci & Technol, Grad Sch Mat Sci, Yunlin 632, China Taipei, Taiwan

来源：

INTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS | 2009年 / 16卷 / 03期

关键词：

silicon oxide; nanowires; Au catalyst; Fe substitution; Si substrate;

D O I：

10.1016/S1674-4799(09)60057-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon oxide (SiOx) nanowires are generally grown on Si substrate under the catalysis of Au in N-2 atmosphere at elevated temperatures. Because the price of Au metal is quite high, Fe metal is then used to replace a part of Au for catalyzing the growth of SiOx nanowires. The results show that the Fe film can be used as the diffusion barrier of Au. SiOx nanowires are grown on Au/Fe/Si substrate at 1030 degrees C. Under the catalysis of Fe/Au, the efficiency for the growth of SiOx nanowires is promoted.

引用

页码：317 / 321

页数：5

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