Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

被引：7

作者：

Xu, Xiangdong ^{[1
]}

Kweh, Hockleong ^{[1
]}

Zhang, Zhengcao ^{[1
]}

Liu, Zhihong ^{[1
]}

Zhou, Wei ^{[1
]}

Zhang, Wei ^{[1
]}

Qian, Peixin ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 20期

关键词：

SiGe; strain relaxation; ultrahigh vacuum chemical vapor deposition; ion implantation;

D O I：

10.1016/j.apsusc.2006.05.064

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si0.7Ge0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar+ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of polycrystal SiGe. (c) 2006 Elsevier B.V.. All rights reserved.

引用

页码：7594 / 7598

页数：5

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