Carrier-wave Rabi flopping signatures in high-order harmonic generation

被引:0
|
作者
Ciappina, M. F. [1 ]
Perez-Hernandez, J. A. [2 ]
Landsman, S. [3 ]
Zimmermann, T. [4 ]
Lewensteine, M. [5 ,6 ]
Roso, L. [2 ]
Krausz, F. [1 ,7 ]
机构
[1] Max Planck Inst Quantum Opt, D-85748 Garching, Germany
[2] Ctr Laseres Pulsados CLPU, E-37008 Salamanca, Spain
[3] Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
[4] ETH, Dept Phys, CH-8093 Zurich, Switzerland
[5] ICFO Inst Ciences Foton, Castelldefels 08860, Spain
[6] ICREA Inst Catalana Recerca & Estudis Avancats, Lluis Co 23, Barcelona 08010, Spain
[7] LMU Munchen, Dept Phys, D-85748 Garching, Germany
关键词
D O I
10.1088/1742-6596/635/9/092032
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present theoretical investigations of carrier-wave Rabi flopping (CWRF) in real atoms by studying high-order harmonic generation in alkali species. We concentrate on the features of the third harmonic of Na and K atoms. For pulse areas of 27 and Na atoms, a characteristic unique peak appears, which, after analyzing the ground state population, we correlate it with the conventional Rabi flopping. On the other hand, for larger pulse areas and K atoms, CWRF occurs, and it is associated with a more complex structure in the third harmonic. These new characteristics indicate the breakdown of the area theorem, as was already demonstrated in narrow band gap semiconductors.
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页数:1
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