Solid-state ZnS quantum dot-sensitized solar cell fabricated by the Dip-SILAR technique

Solid-state quantum dot sensitized solar cells (QDSSCs) were fabricated with zinc sulfide quantum dots (ZnS QDs), which served as the light absorber and the recombination blocking layer simultaneously. ZnS QDs were prepared successfully by a novel successive ionic layer adsorption and reaction technique based on dip-coating (Dip-SILAR). The dependences of the photovoltaic parameters on the number of SILAR cycles (n) were investigated. The cell with n = 6 (particle average size similar to 9 nm) showed an energy conversion efficiency of 2.72% under the illumination of one sun (AM 1.5, 100 mW cm(-2)). Here we investigate also the cohesion between ZnS QDs and ZnO film to obtain a well-covering QD layer.