Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation

被引：12

作者：

Hayashi, Shohei ^{[1
]}

Morisaki, Seiji ^{[1
]}

Kamikura, Takahiro ^{[1
]}

Yamamoto, Shogo ^{[1
]}

Sakaike, Kohei ^{[1
]}

Akazawa, Muneki ^{[1
]}

Higashi, Seiichiro ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Semicond Elect & Integrat Sci, Higashihiroshima, Hiroshima 7398530, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 03期

基金：

日本学术振兴会;

关键词：

SOLID-PHASE CRYSTALLIZATION; EXCIMER-LASER CRYSTALLIZATION; POLY-SI TFTS; THIN-FILMS; LATERAL CRYSTALLIZATION; TRANSISTORS; GROWTH;

D O I：

10.7567/JJAP.53.03DG02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous silicon (a-Si) films were crystallized using three grain growth modes induced by micro-thermal-plasma-jet (mu-TPJ) irradiation and applied to the channel regions of thin-film transistors (TFTs). Solid phase crystallization (SPC) formed microcrystalline grains and showed a lower crystallinity of 70%, whereas leading wave crystallization (LWC) and high-speed lateral crystallization (HSLC) formed significantly larger grains than the TFT channel region. The SPC-TFT showed a lower field-effect mobility (mu(FE)) due to the small grain size and the existence of many grain boundaries, whereas LWC- and HSLC-TFT channels were formed by only single grains and showed a mu(FE) higher than 300cm(2)V(-1)s(-1) in the n-channel. The defect density of HSLC was smaller than that of LWC; consequently, the HSLC-TFT performed better than the LWC-TFT. The maximum mu(FE) values of n-and p-channel HSLC-TFTs were 418 and 224cm(2)V(-1)s(-1), respectively. (C) 2014 The Japan Society of Applied Physics

引用

页数：6

共 23 条

[21] In situ monitoring to visualize temperature distribution in molten silicon region formed under atmospheric pressure thermal plasma jet irradiation
Mizukawa, Yuri
Kameda, Asaki
Hanafusa, Hiroaki
Higashi, Seiichiro
APPLIED PHYSICS EXPRESS, 2020, 13 (01)
[22] Preparation of nitrogen doped silicon oxides thin films by plasma polymerization of 3-aminopropyltriethoxylsilane using atmospheric pressure plasma jet
Lin, Yu-Chun
Wang, Meng-Jiy
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (01)
[23] Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition
Kakiuchi, H
Nakahama, Y
Ohmi, H
Yasutake, K
Yoshii, K
Mori, Y
THIN SOLID FILMS, 2005, 479 (1-2) : 17 - 23

← 1 2 3 →