Tantalum oxide thin film ionic conductors for monolithic electrochromic devices

被引：3

作者：

Hutchins, MG ^{[1
]}

Butt, NS ^{[1
]}

Topping, AJ ^{[1
]}

Gallego, J ^{[1
]}

Milne, P ^{[1
]}

Jeffrey, D ^{[1
]}

Brotherston, I ^{[1
]}

机构：

[1] Oxford Brookes Univ, Solar Energy Mat Res Lab, Oxford OX3 0BP, England

来源：

SOLAR AND SWITCHING MATERIALS | 2001年 / 4458卷

关键词：

tantalum oxide; ion conductor; electrochromic devices;

D O I：

10.1117/12.448239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tantalum oxide (Ta2O5) thin films prepared by reactive magnetron sputtering are investigated for their potential use as the ionic conducting layer in all solid state monolithic electrochromic devices. The paper focuses on the influence of Ta2O5 coatings on the electrochromic response of amorphous tungsten oxide (a-WO3), the methods employed for charging during monolithic device fabrication and associated charge losses caused by subsequent deposition of the component layers of monolithic (all solid state) electrochromic devices. The dependence of the electrochromic response and related charge loss processes have been studied for Ta2O5 films of different thicknesses prepared on a-WO3 electrochromic films.

引用

页码：120 / 127

页数：8

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