Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

被引：3

作者：

Krestnikov, IL ^{[1
]}

Sakharov, AV

Lundin, WV

Musikhin, YG

Kartashova, AP

Usikov, AS

Tsatsul'nikov, AF

Ledentsov, NN

Alferov, ZI

Soshnikov, IP

Hahn, E

Neubauer, B

Rosenauer, A

Litvinov, D

Gerthsen, D

Plaut, AC

Hoffmann, AA

Bimberg, D

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Karlsruhe, Lab Electronenmikroskopie, D-76128 Karlsruhe, Germany

[3] Univ Exeter, Exeter EX4 4QL, Devon, England

[4] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1188011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

InGaN/GaN structures with dense arrays of InGaN nanodomains were grown by metallorganic chemical vapor deposition. Lasing in vertical direction occurs at low temperatures, indicating ultrahigh gains (similar to 10(5) cm(-1)) in the active region. Fabrication of an effective AlGaN/GaN distributed Bragg reflector with reflectivity exceeding 90% enables vertical lasing at room temperature in structures with a bottom distributed Bragg reflector, despite the absence of a well-reflecting upper mirror. The lasing wavelength is 401 nm, and the threshold excitation density is 400 kW/cm(2). (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：481 / 487

页数：7

共 50 条

[21] Study of the formation of InGaN quantum dots on GaN surface
Goncharov V.V.
Korytov M.N.
Brunkov P.N.
Lundin V.V.
Zavarin E.E.
Tsatsul'nikov A.F.
Konnikov S.G.
Bulletin of the Russian Academy of Sciences: Physics, 2009, 73 (1) : 36 - 38
[22] Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures
Johnson, MAL
Brown, JD
El-Masry, NA
Cook, JW
Schetzina, JF
Kong, HS
Edmond, JA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1282 - 1285
[23] Polarization Potentials in InGaN/GaN Semiconductor Quantum Dots
Park, Seoung-Hwan
Hong, Woo-Pyo
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (05) : 1308 - 1311
[24] Formation of composite InGaN/GaN/InAlN quantum dots
A. F. Tsatsul’nikov
E. E. Zavarin
N. V. Kryzhanovskaya
W. V. Lundin
A. V. Saharov
S. O. Usov
P. N. Brunkov
V. V. Goncharov
N. A. Cherkashin
M. Hytch
Semiconductors, 2010, 44 : 1338 - 1341
[25] Luminescence properties of isolated InGaN/GaN quantum dots
Martin, RW
Edwards, PR
Taylor, RA
Rice, JH
Na, JH
Robinson, JW
Smith, JD
Liu, C
Watson, IM
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2005, 202 (03): : 372 - 376
[26] Formation of Composite InGaN/GaN/InAlN Quantum Dots
Tsatsul'nikov, A. F.
Zavarin, E. E.
Kryzhanovskaya, N. V.
Lundin, W. V.
Saharov, A. V.
Usov, S. O.
Brunkov, P. N.
Goncharov, V. V.
Cherkashin, N. A.
Hytch, M.
SEMICONDUCTORS, 2010, 44 (10) : 1338 - 1341
[27] Formation and Nature of InGaN Quantum Dots in GaN Nanowires
Deshpande, Saniya
Frost, Thomas
Yan, Lifan
Jahangir, Shafat
Hazari, Arnab
Liu, Xianhe
Mirecki-Millunchick, Joanna
Mi, Zetian
Bhattacharya, Pallab
NANO LETTERS, 2015, 15 (03) : 1647 - 1653
[28] Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures
J Vac Sci Technol B, 3 (1282):
[29] Mechanisms of electroluminescence in InGaN/AlGaN/GaN heterojunctions with quantum wells
Yunovich, AE
Kudryashov, VE
Turkin, AN
Zolina, KG
Kovalev, AN
Manyakhin, FI
PROCEEDINGS OF THE SECOND SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES, 1998, 97 (34): : 83 - 102
[30] Complex dielectric function of AlGaN/GaN/InGaN heterojunction structures
Jogai, B
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2004, 241 (04): : 952 - 961

← 1 2 3 4 5 →