Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

被引：3

作者：

Krestnikov, IL ^{[1
]}

Sakharov, AV

Lundin, WV

Musikhin, YG

Kartashova, AP

Usikov, AS

Tsatsul'nikov, AF

Ledentsov, NN

Alferov, ZI

Soshnikov, IP

Hahn, E

Neubauer, B

Rosenauer, A

Litvinov, D

Gerthsen, D

Plaut, AC

Hoffmann, AA

Bimberg, D

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Karlsruhe, Lab Electronenmikroskopie, D-76128 Karlsruhe, Germany

[3] Univ Exeter, Exeter EX4 4QL, Devon, England

[4] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1188011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

InGaN/GaN structures with dense arrays of InGaN nanodomains were grown by metallorganic chemical vapor deposition. Lasing in vertical direction occurs at low temperatures, indicating ultrahigh gains (similar to 10(5) cm(-1)) in the active region. Fabrication of an effective AlGaN/GaN distributed Bragg reflector with reflectivity exceeding 90% enables vertical lasing at room temperature in structures with a bottom distributed Bragg reflector, despite the absence of a well-reflecting upper mirror. The lasing wavelength is 401 nm, and the threshold excitation density is 400 kW/cm(2). (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：481 / 487

页数：7

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