Synthesis and characterization of nickel selenide thin films deposited by chemical method

被引：26

作者：

Hankare, P. P. ^{[1
]}

Jadhav, B. V. ^{[1
]}

Garadkar, K. M. ^{[1
]}

Chate, P. A. ^{[2
]}

Mulla, I. S. ^{[3
]}

Delekar, S. D. ^{[4
]}

机构：

[1] Shivaji Univ, Dept Chem, Kolhapur 416004, Maharashtra, India

[2] JSM Coll, Dept Chem, Alibag, MH, India

[3] Natl Chem Lab, Pune, Maharashtra, India

[4] Dr BAM Univ, Dept Chem, PG Sub Ctr, Osmanabad, MH, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 490卷 / 1-2期

关键词：

Semiconductors; Thin films; Crystal growth; X-ray diffraction; ELECTRODEPOSITION;

D O I：

10.1016/j.jallcom.2009.09.132

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Nickel selenide thin films have been deposited using chemical bath method on non-conducting glass substrates in a tartarate bath containing nickel sulphate octahydrate, hydrazine hydrate, sodium seleno-sulphate in an aqueous alkaline medium. The grown films were uniform, well adherent and black in color. The films were characterized using X-ray diffraction, scanning electron microscopy, optical absorption and electrical measurements. The nickel selenide thin film revealed polycrystalline nature with hexagonal system. The direct optical band gap of the film was found to be 1.61 eV. Electrical resistivity of film was observed in the order of 10(3) (Omega cm) with p-type conduction mechanism. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：228 / 231

页数：4

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