Progressive advancement of ZnS-based quantum dot LED

被引：5

作者：

Mandal, Laxman ^{[1
]}

Vidya ^{[1
]}

Verma, Balram ^{[1
]}

Rani, Jyoti ^{[1
]}

Patel, Piyush K. ^{[1
]}

机构：

[1] Maulana Azad Natl Inst Technol Bhopal, Dept Phys, Bhopal, Madhya Pradesh, India

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2021年 / 53卷 / 01期

关键词：

Quantum dots; Light-emitting device; Particle size; Photoluminescence; Rare earth elements; LIGHT-EMITTING-DIODES; CDSE/CDS CORE/SHELL NANOCRYSTALS; SINGLE-STEP SYNTHESIS; OPTICAL-PROPERTIES; DOPED CDS; BAND-GAP; PHOTOLUMINESCENCE PROPERTIES; SEMICONDUCTOR CLUSTERS; ENERGY-TRANSFER; THIN-FILMS;

D O I：

10.1007/s11082-020-02653-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zn1-xCdxS1-ySey: x, y= 0-1 quantum dots (QDs) have been studied for their unique properties, which are: controllable size synthesis, tunable band gap, high quantum efficiency, narrow full width at half maximum (FWHM), high stability and easily tunable emission wavelength in the visible region. They are widely used for the synthesis of quantum dot light-emitting diodes (QLEDs) for display and lighting applications. In this review, general introduction of the development of ZnCdSSe QDs and their uses, synthesis methods of QLEDs, basic properties of ZnS, ZnSe, CdS, and CdSe QDs, the effect of exposure time and temperature on particle size and band gap, the effect of QDs size on the emission of light, basic terms for efficiency, core/shell structure-based QLEDs and doping of rare earth elements into the ZnCdSSe QDs are described.

引用

页数：20

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