Indentation-induced low-temperature solid-phase crystallization of Si1-xGex (x=0-1) on insulator

被引：22

作者：

Toko, Kaoru ^{[1
]}

Sadoh, Taizoh ^{[1
]}

Miyao, Masanobu ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 19期

关键词：

amorphous semiconductors; crystallisation; Ge-Si alloys; indentation; nucleation; semiconductor growth; semiconductor thin films; INDUCED LATERAL CRYSTALLIZATION; THIN-FILM TRANSISTORS; AMORPHOUS-SILICON; STRAIN; SI; LAYERS;

D O I：

10.1063/1.3136857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indentation-induced solid-phase crystallization (SPC) was proposed to achieve low-temperature growth of Si1-xGex (x=0-1) on insulator. Crystal nucleation was enhanced at the indented positions due to the stress effect, which triggered the lateral SPC. As a result, large Si1-xGex (x=0-1) crystal regions (>2 mu m) were achieved on insulator at low temperatures (< 590 degrees C). The growth kinetics for this catalyst metal-free process, i.e., activation energies for nucleation and lateral growth, are presented as a function of the Ge fraction (x).

引用

页数：3

共 50 条

[31] Laser-induced crystallization of a Si1-xGex microstructure
Ma, X
Shi, W
JOURNAL OF MATERIALS SYNTHESIS AND PROCESSING, 2002, 10 (01) : 43 - 46
[32] Low-temperature annealing of polycrystalline Si1-xGex after dopant implantation
Jin, ZH
Gururaj, BA
Yeung, MWY
Kwok, HS
Wong, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (11) : 1958 - 1964
[33] Au-induced crystallization of hydrogenated amorphous Si1-xGex (0.2 ≤ x ≤ 1) thin films with chemical source at low temperature
Peng, Shanglong
Shen, Xiaoyan
Tang, Zeguo
He, Deyan
MATERIALS CHEMISTRY AND PHYSICS, 2008, 107 (2-3) : 431 - 434
[34] Compensation effect in the rate of solid-phase epitaxial growth of Si1-xGex alloys
Suh, KY
Lee, HH
JOURNAL OF APPLIED PHYSICS, 1997, 81 (10) : 7067 - 7069
[35] MATERIALS ISSUES IN STRAINED SOLID-PHASE EPITAXIAL-GROWTH OF SI1-XGEX
PAINE, DC
JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1993, 45 (02): : 55 - 60
[36] Low-temperature epitaxial growth of Si/Si1-xGex/Si heterostructure by chemical vapor deposition
Murota, Junichi
Ono, Shoichi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2290 - 2299
[37] Ge diffusion and solid phase epitaxy growth to form Si1-xGex/Si and Ge on insulator structure
Gao, F
Lee, SJ
Balakumar, S
Du, AY
Foo, YL
Kwong, DL
THIN SOLID FILMS, 2006, 504 (1-2) : 69 - 72
[38] Low-Temperature Solid-Phase Crystallization of High-Sn Concentration SiSn on Insulator
Okamoto, Kota
Kosugt, Tomohiro
Sadoh, Taizoh
PROCEEDINGS OF AM-FPD 21: THE TWENTY-EIGHTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES - TFT TECHNOLOGIES AND FPD MATERIALS, 2021, : 116 - 117
[39] Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy
Liu, JP
Kong, MY
Li, JP
Liu, XF
Huang, DD
Sun, DZ
JOURNAL OF CRYSTAL GROWTH, 1998, 193 (04) : 535 - 540
[40] SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI1-XGEX FILMS DEPOSITED ON SIO2 BY MOLECULAR-BEAM EPITAXY
HWANG, CW
RYU, MK
KIM, KB
LEE, SC
KIM, CS
JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3042 - 3047

← 1 2 3 4 5 →