Root Causes Investigation of Catastrophic Optical Bulk Damage in High-Power InGaAs-AlGaAs Strained QW Lasers

被引:3
|
作者
Sin, Yongkun [1 ]
Lingley, Zachary [1 ]
Ayvazian, Talin [1 ]
Brodie, Miles [1 ]
Ives, Neil [1 ]
机构
[1] Aerosp Corp, Elect & Photon Lab, El Segundo, CA 90245 USA
来源
NOVEL IN-PLANE SEMICONDUCTOR LASERS XVII | 2018年 / 10553卷
关键词
High power laser; single-mode laser; multi-mode laser; reliability; failure mode; degradation mechanism; COBD; INDEX;
D O I
10.1117/12.2287288
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both terrestrial and space satellite communications systems. Since these lasers predominantly fail by catastrophic and sudden degradation due to COD, it is especially crucial for space satellite applications to investigate reliability, failure modes, and degradation mechanisms of these lasers. Our group reported a new failure mode in MM and SM InGaAs-AlGaAs strained QW lasers in 2009 and 2016, respectively. Our group also reported in 2017 that bulk failure due to catastrophic optical bulk damage (COBD) is the dominant failure mode of both SM and MM lasers that were subject to long-term life-tests. For the present study, we report root causes investigation of COBD by performing long-term life tests followed by failure mode analysis (FMA) using various micro-analytical techniques including electron beam induced current (EBIC), time-resolved electroluminescence (EL), focused ion beam (FIB), high-resolution transmission electron microscopy (TEM), and deep level transient spectroscopy (DLTS). Our life-tests with accumulated test hours of over 25,000 hours for SM lasers and over 35,000 hours for MM lasers generated a number of COBD failures with various failure times. EBIC techniques were employed to study dark line defects (DLDs) generated in SM COBD failures stressed under different test conditions. FIB and high-resolution 1EM were employed to prepare cross sectional and plan view TEM specimens to study DLD areas (dislocations) in post-aged SM lasers. Time-resolved EL techniques were employed to study initiation and progressions of dark spots and dark lines in real time as MM lasers were aged. Lastly, to investigate precursor signatures of failure and degradation mechanisms responsible for COBD in both SM and MM lasers, we employed DLTS techniques to study a role that electron traps (non-radiative recombination centers) play in degradation of these lasers. Our in-depth root causes investigation results are reported.
引用
收藏
页数:16
相关论文
共 50 条
  • [41] Catastrophic Optical Damage in Semiconductor Lasers: Physics and New Results on InGaN High-Power Diode Lasers
    Hempel, Martin
    Dadgostar, Shabnam
    Jimenez, Juan
    Kernke, Robert
    Gollhardt, Astrid
    Tomm, Jens W.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2022, 16 (04):
  • [42] Reliability, Failure Modes, and Degradation Mechanisms in High Power Single- and Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers
    Sin, Yongkun
    Presser, Nathan
    Lingley, Zachary
    Brodie, Miles
    Foran, Brendan
    Moss, Steven C.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS XIV, 2016, 9733
  • [43] ORGANOMETALLIC VAPOR-PHASE EPITAXY OF HIGH-PERFORMANCE STRAINED-LAYER INGAAS-ALGAAS DIODE-LASERS
    WANG, CA
    CHOI, HK
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (03) : 681 - 686
  • [44] Catastrophic Optical Damage in High-Power Diode Lasers Monitored by Real-Time Imaging
    Ziegler, Mathias
    Tomm, Jens W.
    Elsaesser, Thomas
    Matthiesen, Clemens
    2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 2145 - +
  • [45] DESIGN OF HIGH-POWER STRAINED INGAAS/ALGAAS QUANTUM-WELL LASERS WITH A VERTICAL DIVERGENCE ANGLE OF 18-DEGREES
    TEMMYO, J
    SUGO, M
    ELECTRONICS LETTERS, 1995, 31 (08) : 642 - 644
  • [46] Catastrophic Optical Mirror Damage of High Power Diode Lasers
    Tomm, Jens W.
    Ziegler, Mathias
    Elsaesser, Thomas
    2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2, 2009, : 597 - 599
  • [47] Bulk Degradation of High Power InAlGaAs-AlGaAs Strained Quantum Well Lasers
    Kong, Jin-Xia
    Liu, Qi-Kun
    Xiong, Cong
    Qi, Qiong
    Zhu, Ling-Ni
    Liu, Su-Ping
    Ma, Xiao-Yu
    Wang, Zhan-Guo
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 18 (11) : 7364 - 7368
  • [48] High-power InGaAs-GaAs-AlGaAs distributed feedback lasers with nonabsorbing mirrors
    Lammert, RM
    Ungar, JE
    Oh, SW
    Qi, H
    Chen, JS
    ELECTRONICS LETTERS, 1998, 34 (09) : 886 - 887
  • [49] Influence of resonator length on catastrophic optical damage in high-power AlGaInP broad-area lasers
    Sanayeh, Marwan Bou
    HIGH-POWER, HIGH-ENERGY, AND HIGH-INTENSITY LASER TECHNOLOGY III, 2017, 10238
  • [50] HIGH-POWER STRAINED-LAYER INGAAS/ALGAAS TAPERED TRAVELING-WAVE AMPLIFIER
    WALPOLE, JN
    KINTZER, ES
    CHINN, SR
    WANG, CA
    MISSAGGIA, LJ
    APPLIED PHYSICS LETTERS, 1992, 61 (07) : 740 - 741