Si/NiFe bilayer structures are very effective to obtain c-axis orientation in both a Ru intermediate layer and a CoPtCr-SiO2 recording layer when they successively deposited on the Si/NiFe bilayer. Doubly layered Ru which consists of two Ru layers prepared at low and high sputtering gas pressures promoted c-axis orientation and well-isolated grains of the CoPtCr even when the Ru intermediate layer was very thin. Doubly layered Ru intermediate layers deposited on Si/NiFe seed layers attained suitable c-axis orientation and well-isolated grains of the CoPtCr recording layer, even though the Ru double-layer was as thin as 5 nm. (C) 2014 AIP Publishing LLC.
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Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213, United StatesData Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213, United States
Yuan, Hua
Laughlin, David E.
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Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213, United StatesData Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213, United States
Laughlin, David E.
Zhu, Xiaobin
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Seagate Technology, 1251 Waterfront Place, Pittsburgh, PA 15222, United StatesData Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213, United States
Zhu, Xiaobin
Lu, Bin
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Seagate Technology, 1251 Waterfront Place, Pittsburgh, PA 15222, United StatesData Storage Systems Center, Carnegie Mellon University, Pittsburgh, PA 15213, United States