A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25% PAE

被引：0
|
作者：
Bessemoulin, A [1 ]
Massler, H [1 ]
Quay, R [1 ]
Ramberger, S [1 ]
Schlechtweg, M [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002 | 2002年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-mum gate length GaAs power PHEMT process on 4" wafer, this two-stage amplifier, having a chip size of 16 mm(2), averages 4 Watts CW and 25-% PAE in the X-band, with more than 18-dB linear gain. Peak output powers of P-1dB=36.3 dBm (4.3 Watts) and P-sat of 36.9 dBm (4.9 Watt) at 10 GHz: with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAs.
引用
收藏
页码：189 / 192
页数：4
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