Semipolar InGaN/GaN nanostructure light-emitting diodes on c-plane sapphire

被引：15

作者：

Rishinaramangalam, Ashwin K. ^{[1
]}

Nami, Mohsen ^{[1
]}

Fairchild, Michael N. ^{[1
]}

Shima, Darryl M. ^{[1
]}

Balakrishnan, Ganesh ^{[1
]}

Brueck, S. R. J. ^{[1
]}

Feezell, Daniel F. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Elect & Comp Engn Dept, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 03期

关键词：

QUANTUM-WELLS; GAN; EMISSION; GROWTH; SINGLE;

D O I：

10.7567/APEX.9.032101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fabrication of electrically injected triangular-nanostripe core-shell semipolar III-nitride LEDs (TLEDs) is demonstrated using interferometric lithography and catalyst-free bottom-up selective-area metal-organic chemical vapor deposition (MOCVD). This alternative approach enables semipolar orientations on inexpensive, c-plane sapphire substrates, in comparison with planar growth on free-standing GaN substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy reveal nonuniform quantum well thickness and composition, respectively, as a function of location on the triangular stripes. The broad electroluminescence spectra, wavelength shift with increasing current density, and nonlinear light vs current characteristics are well correlated with the observed quantum-well nonuniformities. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

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