Photoinduced changes in the optical constants of Ge-Se-AgI thin films

被引:6
|
作者
Boev, V
Mitkova, M
Nikolova, L
Todorov, T
Sharlandjiev, P
机构
[1] Bulgarian Acad Sci, Cent Lab Electrochem Power Sources, BU-1113 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Cent Lab Opt Storage & Proc Informat, BU-1113 Sofia, Bulgaria
基金
美国国家科学基金会;
关键词
chalcogenide glasses; photoinduced changes; refractive index; thin film;
D O I
10.1016/S0925-3467(99)00090-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The photoinduced changes in the complex refractive index n = n - ik of thin films from the Ge-Se-AgI system with constant ratio Ge/Se = 1/4 and concentrations of AgI of 0, 5 and 10 mol% are studied by real time measurements of reflectance (R) and transmittance (T) of the films. The phase delay (delta) between the components of the transmitted wave, which is proportional to the birefringence of the film, is measured in real time as well. The changes in the average value of the refractive index (Delta n)- and in the average value of the absorption index (Delta k) in the imaginary part of n as well as the induced optical anisotropy are estimated by solving the inverse optical problem. It is found that involving small quantities of AgI into a Ge-Se matrix increases the sensitivity of the films, but the anisotropic effects are comparatively weakly in them. The maximum values of changes in the average refractive index (Delta n = 0.025) and in the average absorption index (Delta k = -0.03) are obtained in the films, containing 5 and 10 mol% AgI, respectively. Considerable values of the photoinduced anisotropy - birefringence (Delta n(a), approximate to -0.002) and dichroism (Delta D approximate to 0.05, which corresponds to Delta k(a) approximate to 0.035) are observed in films without addition of AgI ("pure" Ge-Se film). (C) 2000 Elsevier Science B.V.. All rights reserved.
引用
收藏
页码:389 / 396
页数:8
相关论文
共 50 条
  • [21] Photoinduced changes in sulphur rich Ge-As-S thin films
    Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
    J. Optoelectron. Adv. Mat., 2009, 9 (1253-1256):
  • [22] Photoinduced changes in optical properties of Ga-Sb-Ge-Se glasses
    Tintu, R.
    Nampoori, V. P. N.
    Radhakrishnan, P.
    Thomas, Sheenu
    OPTICS COMMUNICATIONS, 2011, 284 (01) : 222 - 225
  • [23] PHOTOINDUCED CHANGES IN AMORPHOUS P-SE THIN-FILMS
    KUMAR, A
    MALHOTRA, LK
    CHOPRA, KL
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 92 (01) : 51 - 60
  • [24] Photoinduced changes in sulphur rich Ge-As-S thin films
    Arsova, D.
    Vateva, E.
    Pamukchieva, V.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (09): : 1253 - 1256
  • [25] Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films
    Halenkovic, Tomas
    Kotrla, Magdalena
    Gutwirth, Jan
    Nazabal, Virginie
    Nemec, Petr
    PHOTONICS RESEARCH, 2022, 10 (09) : 2261 - 2266
  • [26] Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films
    TOM HALENKOVI
    MAGDALNA KOTRLA
    JAN GUTWIRTH
    VIRGINIE NAZABAL
    PETR NMEC
    Photonics Research, 2022, (09) : 2261 - 2266
  • [27] Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films
    TOMá? HALENKOVI?
    MAGDALéNA KOTRLA
    JAN GUTWIRTH
    VIRGINIE NAZABAL
    PETR N■MEC
    Photonics Research, 2022, 10 (09) : 2261 - 2266
  • [28] PHOTOINDUCED CHEMICAL-CHANGES IN OBLIQUELY DEPOSITED AMORPHOUS SE-GE FILMS
    SINGH, B
    RAJAGOPALAN, S
    CHOPRA, KL
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1768 - 1772
  • [29] PHOTOINDUCED POTENTIAL BARRIER IN AS-SE-GE FILMS
    KATYAL, SC
    OKANO, S
    SUZUKI, M
    BANDO, T
    SOLID STATE COMMUNICATIONS, 1988, 66 (06) : 581 - 584
  • [30] Photoinduced effects in amorphous Ge-Se films
    Liu, Qiming
    Zhao, Xujian
    Gan, Fuxi
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2006, 8 (05): : 1838 - 1842