Fine structural splitting and exciton spin relaxation in single InAs quantum dots

被引：2
|
作者：
Dou, X. M. [1 ]
Sun, B. Q. [1 ]
Xiong, Y. H. [1 ]
Niu, Z. C. [1 ]
Ni, H. Q. [1 ]
Xu, Z. Y. [1 ]
机构：
[1] Chinese Acad Sci, SKLSM, Inst Semicond, Beijing 100083, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 10期
关键词：
deformation; excitons; fine structure; III-V semiconductors; indium compounds; phonons; photoluminescence; semiconductor quantum dots; spin dynamics; ELECTRON;
D O I：
10.1063/1.3131700
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the exciton spin dynamics in single InAs quantum dots (QDs) with different exciton fine structural splitting (FSS) by transient luminescence measurements. We have established the correlation between exciton spin relaxation rate and the energy splitting of the FSS when FSS is nonzero and found that the spin relaxation rate in QD increases with a slope of 8.8x10(-4) ns(-1) mu eV(-1). Theoretical analyses based on the phonon-assisted relaxations via the deformation potential give a reasonable interpretation of the experimental results.
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页数：4
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