Theoretical comparison between quantum well and dot infrared photodetectors

被引:16
|
作者
Nasr, A. [1 ]
El Mashade, M. B.
机构
[1] Atom Energy Author, NCRRT, Radiat Engn Dept, Cairo, Egypt
[2] Al Azhar Univ, Fac Engn, Dept Elect Engn, Cairo, Egypt
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 2006年 / 153卷 / 04期
关键词
D O I
10.1049/ip-opt:20050029
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The aim of the-authors is a performance comparison of quantum dot infrared photodetectors (QDIPs) with quantum well infrared photodetectors (QWIPs) under various operating conditions. This type of photodetector is interesting from the point-of-view that QWIPs have numerous advantages over photodetectors based on HgCdTe. From a quantum structure point-of-view, QDIPs have several advantages over QWIPs, especially their wide spectrum range that can be covered, as well as the availability of absorption normal incident light. However, they still have some problems that include high values of dark current and lower values of their responsivity. For these reasons, there is a need to make a theoretical comparison between the two fundamental types of quantum photodetectors. The more interesting parameters of these detectors to achieve this comparison are calculated. These parameters include dark current, photocurrent, responsivity and detectivity. Numerical results show that QDIPs have a lower value for their responsivity and detectivity for the same operating conditions. The aim is to reduce the dark current by adjusting the doping level of these detectors. Moreover, the effect of lateral size and its associated adaptive value can improve the behaviour of the QDIPs that are processed to some extent.
引用
收藏
页码:183 / 190
页数:8
相关论文
共 50 条
  • [41] Quantum-dot infrared photodetectors: A review
    Stiff-Roberts, Adrienne D.
    SPIE Reviews, 2010, 1 (01):
  • [42] Tunnel current in quantum dot infrared photodetectors
    Duboz, JY
    Liu, HC
    Wasilewski, ZR
    Byloss, M
    Dudek, R
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 1320 - 1322
  • [43] Broadband SiGeSi quantum dot infrared photodetectors
    Lin, C.-H.
    Yu, C.-Y.
    Peng, C.-Y.
    Ho, W.S.
    Liu, C.W.
    Journal of Applied Physics, 2007, 101 (03):
  • [44] Photocurrent and responsivity of quantum dot infrared photodetectors
    Liu Hong-Mei
    Wang Ping
    Shi Yun-Long
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 35 (02) : 139 - 142
  • [45] Analysis of the photocurrent in quantum dot infrared photodetectors
    Ryzhii, V
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (2B): : L148 - L150
  • [46] Dark current in quantum dot infrared photodetectors
    Ryzhii, Victor
    Pipa, Victor
    Khmyrova, Irina
    Mitin, Vladimir
    Willander, Magnus
    Japanese journal of applied physics, 2000, 39 (12 B)
  • [47] Quantum dot infrared photodetectors: Interdot coupling
    Apalkov, Vadim
    Journal of Applied Physics, 2006, 100 (07):
  • [48] Recent Progress of Quantum Dot Infrared Photodetectors
    Wang, Zan
    Gu, Yunjiao
    Li, Xiaoman
    Liu, Yan
    Liu, Fenghua
    Wu, Weiping
    ADVANCED OPTICAL MATERIALS, 2023, 11 (19)
  • [49] Insight into performance of quantum dot infrared photodetectors
    Martyniuk, P.
    Rogalski, A.
    BULLETIN OF THE POLISH ACADEMY OF SCIENCES-TECHNICAL SCIENCES, 2009, 57 (01) : 103 - 116
  • [50] Characteristics of InGaAs quantum dot infrared photodetectors
    Xu, SJ
    Chua, SJ
    Mei, T
    Wang, XC
    Zhang, XH
    Karunasiri, G
    Fan, WJ
    Wang, CH
    Jiang, J
    Wang, S
    Xie, XG
    APPLIED PHYSICS LETTERS, 1998, 73 (21) : 3153 - 3155