On the role of Ge in the growth of β-FeSi2 on silicon (100) surfaces

被引：3
|
作者：
Zenkevich, A [1 ]
Gaiduk, PI
Gunnlaugsson, HP
Weyer, G
机构：
[1] Moscow Engn Phys Inst, Moscow 115409, Russia
[2] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 05期
关键词：
D O I：
10.1063/1.1497185
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The microstructure of beta-FeSi2 silicide layers formed with the addition of Ge by pulsed laser deposition at 650 degreesC on (001) Si substrate has been investigated by transmission electron microscopy and Mossbauer spectroscopy. The Ge atoms are not incorporated in the silicide in noticeable amounts but the addition causes the growth of beta-FeSi2 micrograins with a high density of specific twin lamellae, whereas Ge segregates in epitaxial SiGe alloy grains. (C) 2002 American Institute of Physics.
引用
收藏
页码：904 / 906
页数：3
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