X-ray diffraction radiation in conditions of Cherenkov effect

被引:10
|
作者
Tishchenko, A. A.
Potylitsyn, A. P.
Strikhanov, M. N.
机构
[1] State Univ, Moscow Phys Engn Inst, Moscow 115409, Russia
[2] Tomsk Polytech Univ, Tomsk 634050, Russia
关键词
X-ray Cherenkov radiation; diffraction radiation; absorption edge; TRANSITION RADIATION; CERENKOV RADIATION; GRAZING-INCIDENCE; NARROW-BAND; ELECTRONS; PHOTOABSORPTION; EMISSION; EDGE;
D O I
10.1016/j.physleta.2006.06.066
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
X-ray diffraction radiation from ultra-relativistic electrons moving near an absorbing target is considered. The emission yield is found to increase significantly in conditions of Cherenkov effect. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:509 / 511
页数:3
相关论文
共 50 条
  • [41] X-RAY DIFFRACTION
    POST, B
    FANKUCHEN, I
    ANALYTICAL CHEMISTRY, 1956, 28 (04) : 591 - 595
  • [42] X-RAY DIFFRACTION
    KAUFMAN, HS
    FRANKUCHEN, I
    ANALYTICAL CHEMISTRY, 1954, 26 (01) : 31 - 33
  • [43] X-RAY DIFFRACTION
    PFLUGER, CE
    ANALYTICAL CHEMISTRY, 1970, 42 (05) : R317 - +
  • [44] X-RAY DIFFRACTION
    FANKUCHEN, I
    ANALYTICAL CHEMISTRY, 1958, 30 (04) : 593 - 596
  • [45] X-RAY DIFFRACTION
    FANKUCHEN, I
    PHYSICAL METHODS OF ORGANIC CHEMISTRY, 1949, 1 (02): : 1073 - &
  • [46] X-Ray Diffraction
    不详
    ADVANCED MATERIALS & PROCESSES, 2008, 166 (12): : 32 - 32
  • [47] X-RAY DIFFRACTION
    KAUFMAN, HS
    FANKUCHEN, I
    ANALYTICAL CHEMISTRY, 1950, 22 (01) : 16 - 18
  • [48] Effect of high-intensity x-ray radiation on Bragg diffraction in silicon and diamond
    Hau-Riege, Stefan P.
    Pardini, Tommaso
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (11)
  • [50] Synchrotron radiation X-ray topography and X-ray diffraction of homoepitaxial GaN grown on ammonothermal GaN
    Sintonen, Sakari
    Ali, Muhammad
    Suihkonen, Sami
    Kostamo, Pasi
    Svensk, Olli
    Sopanen, Markku
    Lipsanen, Harri
    Paulmann, Carsten
    Tuomi, Turkka O.
    Zajac, Marcin
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1630 - 1632