Blue shift of photoluminescence spectrum of porous silicon by helium ion irradiation

被引：5
|
作者：
Yamauchi, Y
Sakurai, T
Hirohata, Y
Hino, T
Nishikawa, M
机构：
[1] Hokkaido Univ, Dept Nucl Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Sci Solut Int Lab Inc, Meguro Ku, Tokyo 1530065, Japan
来源：
VACUUM | 2002年 / 66卷 / 3-4期
关键词：
photoluminescence; porous silicon; ion irradiation;
D O I：
10.1016/S0042-207X(02)00164-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effects of helium ion irradiation on photoluminescence spectrum of porous silicon were investigated. Photoluminescence spectra were measured for silicon prepared by only anodization (porous silicon), by only helium ion irradiation, and by helium ion irradiation before or after anodization. The porous silicon prepared only by anodization showed a photoluminescence spectrum with a peak intensity at 650 nm. The silicon prepared only by helium ion irradiation had no photoluminescence. Silicon prepared by helium ion irradiation followed by anodization showed a blue shift in the photoluminescence spectrum. The blue shift increased as a fluence of helium ion although the intensity decreased. The present blue shift is due to change of silicon nanocrystal structure at the surface. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：415 / 418
页数：4
相关论文
共 50 条
  • [1] Blue shift of photoluminescence spectrum of porous InP
    Suchikova, J. A.
    Kidalov, V. V.
    Sukach, G. A.
    NANOTECHNOLOGY (GENERAL) - 216TH ECS MEETING, 2010, 25 (24): : 59 - 64
  • [2] The Effect of Argon Ion Irradiation Parameters on the Photoluminescence Spectrum of Porous Silicon
    A. V. Kozhemiako
    A. P. Evseev
    Yu. M. Spivak
    E. N. Muratova
    Yu. V. Balakshin
    A. V. Nazarov
    A. A. Shemukhin
    V. S. Chernysh
    Moscow University Physics Bulletin, 2020, 75 : 465 - 468
  • [3] The Effect of Argon Ion Irradiation Parameters on the Photoluminescence Spectrum of Porous Silicon
    Kozhemiako, A., V
    Evseev, A. P.
    Spivak, Yu M.
    Muratova, E. N.
    Balakshin, Yu, V
    Nazarov, A., V
    Shemukhin, A. A.
    Chernysh, V. S.
    MOSCOW UNIVERSITY PHYSICS BULLETIN, 2020, 75 (05) : 465 - 468
  • [4] The effects of ion irradiation on porous silicon photoluminescence
    Jacobsohn, LG
    Bennett, BL
    Cooke, DW
    Muenchausen, RE
    Nastasi, M
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
  • [5] Influence of the electronic irradiation on spectrum photoluminescence porous silicon
    Aliev, B. A.
    BULLETIN OF THE UNIVERSITY OF KARAGANDA-PHYSICS, 2010, 3 (59): : 3 - 7
  • [6] On the Short-Wavelength Shift of Photoluminescence Spectrum in Porous Silicon
    Kidrasov, F. F.
    Savotin, V. I.
    Seleznev, V. N.
    Lebedev Physics Institute. Bulletin, 1994, 1266 (05):
  • [7] ION-IRRADIATION CONTROL OF PHOTOLUMINESCENCE FROM POROUS SILICON
    BARBOUR, JC
    DIMOS, D
    GUILINGER, TR
    KELLY, MJ
    TSAO, SS
    APPLIED PHYSICS LETTERS, 1991, 59 (17) : 2088 - 2090
  • [8] The effect of low-energy-ion irradiation on photoluminescence of porous silicon
    Zhao, N.Q.
    Jin, Y.
    Du, X.W.
    Fu, Y.S.
    Journal of Applied Physics, 2007, 101 (02):
  • [9] The effect of low-energy-ion irradiation on photoluminescence of porous silicon
    Zhao, N. Q.
    Jin, Y.
    Du, X. W.
    Fu, Y. S.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
  • [10] A thousand-fold enhancement of photoluminescence in porous silicon using ion irradiation
    Breese, M.B.H. (phymbhb@nus.edu.sg), 1600, American Institute of Physics Inc. (114):
12345