A thousand-fold enhancement of photoluminescence in porous silicon using ion irradiation

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[1] [1,Azimi, S.
[2] Song, J.
[3] Dang, Z.Y.
[4] 1,Breese, M.B.H.
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Breese, M.B.H. (phymbhb@nus.edu.sg) | 1600年 / American Institute of Physics Inc.卷 / 114期
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A large increase in the porosity of highly doped p-type silicon is observed at the end-of-range depth of high-energy ions after subsequent electrochemical anodization. This occurs under certain conditions of irradiation geometry and fluence; owing to the dual effects of increased wafer resistivity and a locally increased current density during anodization. This results in the creation of highly porous; sub-surface zones which emit photoluminescence with an intensity of more than three orders of magnitude greater than the surrounding mesoporous silicon; comparable to that produced by microporous silicon. This provides means of selectively enhancing and patterning the photoluminescence emission from micron-sized areas of porous silicon over a wide range of intensity. © 2013 AIP Publishing LLC;
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