Coherent Raman scattering from electron spin coherence in GaAs quantum wells

被引:6
|
作者
Palinginis, P [1 ]
Wang, HL [1 ]
机构
[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
关键词
spin coherence; coherent Raman scattering; nonlinear optics; nonradiative quantum coherence;
D O I
10.1016/j.jmmm.2003.12.1186
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the experimental demonstration of a coherent Raman response from long-lived electron spin coherence in differential transmission spectra of GaAs quantum wells. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:1919 / 1920
页数:2
相关论文
共 50 条
  • [31] Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells
    Tackeuchi, A
    Kuroda, T
    Muto, S
    Wada, O
    PHYSICA B-CONDENSED MATTER, 1999, 272 (1-4) : 318 - 323
  • [32] Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells
    Tackeuchi, A
    Kuroda, T
    Muto, S
    Nishikawa, Y
    Wada, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (08): : 4680 - 4687
  • [33] Electron spin-relaxation dynamics in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells
    Tackeuchi, Atsushi
    Kuroda, Takamasa
    Muto, Shunichi
    Nishikawa, Yuji
    Wada, Osamu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (08): : 4680 - 4687
  • [34] Resonant Raman scattering in GaAs/AlGaAs quantum wells modulated by microwave irradiation and by electron-hole photogeneration
    Ashkinadze, BM
    Linder, E
    Cohen, E
    Ron, A
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1997, 164 (01): : 231 - 234
  • [35] Studies on Electron Spin Relaxation in AlGaAs/GaAs Multi Quantum Wells
    Wu, Yu
    ELECTRICAL INFORMATION AND MECHATRONICS AND APPLICATIONS, PTS 1 AND 2, 2012, 143-144 : 216 - 219
  • [36] Study of electron spin relaxation time in GaAs (110) quantum wells
    Liu, Linsheng
    Liu, Su
    Wang, Wenxin
    Zhao, Hongming
    Liu, Baoli
    Gao, Hanchao
    Jiang, Zhongwei
    Wang, Jia
    Huang, Qing'an
    Chen, Hong
    Zhou, Junming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (06): : 856 - 859
  • [37] Anisotropic electron spin lifetime in (In,Ga)As/GaAs (110) quantum wells
    Schreiber, L.
    Duda, D.
    Beschoten, B.
    Guentherodt, G.
    Schoenherr, H.-P.
    Herfort, J.
    PHYSICAL REVIEW B, 2007, 75 (19):
  • [38] Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells
    Balocchi, A.
    Duong, Q. H.
    Renucci, P.
    Liu, B. L.
    Fontaine, C.
    Amand, T.
    Lagarde, D.
    Marie, X.
    PHYSICAL REVIEW LETTERS, 2011, 107 (13)
  • [39] Electron spin relaxation in p-type GaAs quantum wells
    Zhou, Y.
    Jiang, J. H.
    Wu, M. W.
    NEW JOURNAL OF PHYSICS, 2009, 11
  • [40] Carrier mobility dependence of electron spin relaxation in GaAs quantum wells
    Terauchi, R
    Ohno, Y
    Adachi, T
    Sato, A
    Matsukura, F
    Tackeuchi, A
    Ohno, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2549 - 2551