Synthesis of nanocrystalline GaN by the sol-gel method

被引：37
|
作者：
Qiu, Hailin [1 ]
Cao, Chuanbao [1 ]
Zhu, Hesun [1 ]
机构：
[1] Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 136卷 / 01期
基金：
高等学校博士学科点专项科研基金;
关键词：
gallium nitride; nanopowder; sol-gel; microstructure;
D O I：
10.1016/j.mseb.2006.08.062
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single-phase wurtzite GaN nanocrystals with an average diameter of 11 +/- 3 nm were synthesized by the sol-gel technique from readily available Ga(NO3)(3). Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) confirmed they had a hexagonal structure and a narrow size distribution of the nanocrystals. X-ray powder diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurement showed that the GaN powder was of single-phase wurtzite structure with a considerable fraction of structural defects such as twin and stacking faults. The IR spectrum showed that only the Ga-N stretch is present at 600 cm(-1). The EDX pattern of as-prepared product showed their ratio approximate to 1:1. Room temperature photoluminescence (PL) measurement exhibited the band-edge emission of GaN at about 390 nm and defect emission peak at 610 nm. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：33 / 36
页数：4
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