A rigorous assessment of electro-thermal device instabilities via Harmonic Balance modeling

被引：0

作者：

Cappelluti, Federica ^{[1
]}

Traversa, Fabio L. ^{[1
]}

Bonani, Fabrizio ^{[1
]}

机构：

[1] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy

来源：

2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2008年

关键词：

D O I：

10.1109/EMICC.2008.4772322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a rigorous numerical approach to the assessment of electro-thermal instabilities arising in high-power semiconductor devices operating under time-periodic conditions. The methodology is entirely developed in the frequency domain with reference to the Harmonic Balance technique, i.e. no time-domain calculations are required for the determination of the Floquet multipliers exploited for the stability analysis. As an example of application, the current gain collapse occurring in multifinger AlGaAs/GaAs HBTs is studied and compared to the customary stability criterion based on a purely static analysis.

引用

页码：434 / 437

页数：4

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