Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

被引：4

作者：

Bell, KA ^{[1
]}

Ebert, M ^{[1
]}

Yoo, SD ^{[1
]}

Flock, K ^{[1
]}

Aspnes, DE ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 01期

关键词：

real-time monitoring; organometallic vapor phase epitaxy; quadrupole mass spectrometry; spectroscopic ellipsometry; reflectance-difference spectroscopy; silicon (Si); gallium phosphide (GaP);

D O I：

10.1007/s11664-000-0104-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a modified commercial OMVPE reactor that incorporates quadrupole mass spectrometry (QMS) with a broadband parallel-processing optical spectrometer that simultaneously performs spectroscopic ellipsometry (SE) and reflectance-difference spectroscopy (RDS) measurements. We demonstrate its use by determining the surface temperature of Si to a precision of +/-1 degrees C and investigating the initial stages of GaP heteroepitaxy on Si(100). Analysis of the real-time SE data indicates that under our conditions GaP and Si interpenetrate as optically identifiable materials on a thickness scale of 100 Angstrom.

引用

页码：106 / 111

页数：6

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