Structural, morphological and optical properties of thin films obtained by SILAR method

被引:0
|
作者
Sall, T. [1 ]
Raidou, A. [1 ]
Elfarrass, S. [2 ]
Hartiti, B. [2 ]
Mari, B. [3 ]
Qachaou, A. [1 ]
Fahoume, M. [1 ]
机构
[1] Univ Ibn Tofail, LPMC Fac Sci, Kenitra 13314000, Morocco
[2] Univ Hassan II FSTM Mohammedia, Dept Phys, LPMAER, Mohammadia, Morocco
[3] Univ Politecn Valencia, Lab Tecnol Optoelect Fotovolta 1, E-46071 Valencia, Spain
关键词
In2S3; Thin films; SILAR method; Photovoltaic; SUBSTRATE;
D O I
10.1007/s11082-013-9786-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In2S3 thin films have been elaborated onto glass substrate by SILAR method at room temperature using different immersion time in the solution of cation and anion and fixing the rinsing time. The film composition, morphology and structure were investigated using energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and X-ray diffraction techniques. Optical properties, such transmission and band gap have been also analyzed. The effects of annealing on the morphological structure thin films are also described. The x-rays diffraction spectra indicated that the formed compounds are - polycrystalline thin films with as second phase in sample S1 and sample S2 and no another phase in sample 3. SEM revealed homogeneous and relatively uniform films and EDAX shows sample 3 with S/In=1.44. For sample 1 and sample 2, we noted an increase of band gap when rinsing time increases.
引用
收藏
页码:247 / 257
页数:11
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