Effect of Energy Bandgap of the Amorphous Silicon Carbide (A-Sic: H) Layers On A-Si Multijuntion Solar Cells from Numerical Analysis

In this work, single and multijunction amorphous silicon carbide (a-SiC:H) thin film solar cells have been investigated by the Analysis of Microelectronic and Photonic Structures (AMPS ID) simulator in respect to overall performance. The photovoltaic characteristics have been observed by changing the optical energy bandgap of p-layer. For single junction, a good efficiency trend has been found for the window layer energy bandgap of 1.8-2.2 eV and the highest efficiency is achieved to be 17.67% at 2 eV. In the case of double junction, the efficiency has been found for the second p-layer energy bandgap of 1.8-2 eV and the highest efficiency is 19.04% at 1.9 eV. On the other hand, for triple junction solar cell the maximum efficiency has been found for the bottom cell's p-layer energy bandgap of 1.7-1.9 eV and the highest efficiency is 20.42% at 1.8 eV. It is evident that the optimum energy bandgap for a-SiC:H as window layers in triple junction configuration is 1.8-2.1 eV.