Characteristics of Sputter-deposited Gadolinia-doped Ceria Thin Films on Al2O3/SiO2/Si Systems

被引:2
|
作者
Kuo Yulin [1 ]
Lee Chiapyng [2 ]
Chen Yongsiou [1 ,2 ]
Su Yuming [1 ]
Liang Hsuang [2 ]
机构
[1] Tatung Univ, Dept Mat Engn, Taipei 10452, Taiwan
[2] Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 10607, Taiwan
关键词
gadolinia-doped ceria(GDC); yttria-stabilized zirconia(YSZ); RF sputtering; solid electrolytes; solid oxide fuel cells; OXIDE FUEL-CELLS; LAGAO3; MICROSTRUCTURE; ELECTROLYTES; CONDUCTIVITY; OPERATION; SR;
D O I
10.3901/CJME.2009.03.384
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Metal oxide films prepared by thin film technology have been reported for the potential applications on thin solid electrolyte layers for solid oxide fuel cells(SOFCs). Gadolinia-doped ceria(GDC) thin films and Al2O3 layers on SiO2/Si substrates are successively deposited by F-F reactive magnetron sputtering from a cerium-gadolinium (90: 10 at.%) alloy target and Al target in O-2/Ar gas mixture and then perform post-thermal treatments at 300-700 degrees C and 900 degrees C for 2 h, respectively. Materials characteristics and chemical compositions of GDC films and Al2O3 layers are investigated by X-ray photoelectron spectroscopy(XPS), cross-sectional scanning electron microscopy(SEM), X-ray diffraction(XRD), and atomic force microscopy(AFM). Stoichiometric Al2O3 layers with polycrystalline structures are firstly prepared onto SiO2/Si substrates. A cubic fluorite structure with columnar crystallites of GDC films is successfully deposited on Al2O3/SiO2/Si Systems. The chemical composition of 700 degrees C-annealed GDC films is (Ce0.91Gd0.09)O-1.94 and possesses a higher film density of 7.257 g/cm(3). As a result, GDC thin films prepared by RF reactive magnetron sputtering and post-thermal treatments can be used as thin solid electrolyte layers for intermediate temperature SOFCs system as compared to the well-known yttria-stabilized zirconia(YSZ).
引用
收藏
页码:384 / 389
页数:6
相关论文
共 50 条
  • [41] Temperature dependence of SiO2/Si interfacial structure formed by radio-frequency magnetron sputter deposited SiO2 thin films on Si(111)
    Li, BQ
    Fujimoto, T
    Kojima, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (02): : 552 - 554
  • [42] POLARIZATION EFFECTS IN SIO2 AND AL2O3 THIN SKINS
    KORZO, VF
    KIREEV, PS
    LYASHCHENKO, GA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1968, (05): : 100 - +
  • [43] Bias sputter deposited Ni/Al2O3 cermet thin films for gas flow sensors
    Chiu, K. -F.
    Dai, C. C.
    THIN SOLID FILMS, 2006, 513 (1-2) : 374 - 379
  • [44] Photoluminescence and Structure of Sputter-deposited Zn2SiO4: Mn Thin Films
    Lee, Yeon Oh
    Kim, Joo Han
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 68 (02) : 283 - 287
  • [45] Wetting characteristics of CaO−SiO2−Al2O3 ternary slag on refractory oxides, Al2O3, SiO2 and TiO2
    Sung-Mo Seo
    Dong-Sik Kim
    Young Hyun Paik
    Metals and Materials International, 2001, 7 : 479 - 483
  • [46] Photoluminescence and structure of sputter-deposited Zn2SiO4:Mn thin films
    Yeon Oh Lee
    Joo Han Kim
    Journal of the Korean Physical Society, 2016, 68 : 283 - 287
  • [47] PH ISFETS USING AL2O3, SI3N4, AND SIO2 GATE THIN-FILMS
    MATSUO, T
    ESASHI, M
    ABE, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1856 - 1857
  • [48] SPUTTER-DEPOSITED AL2O3-MO-AL2O3 SELECTIVE ABSORBER COATINGS
    THORNTON, JA
    PENFOLD, AS
    LAMB, JL
    THIN SOLID FILMS, 1980, 72 (01) : 101 - 109
  • [49] LUMINESCENT CHARACTERISTICS OF TB DOPED AL2O3 FILMS DEPOSITED BY SPRAY PYROLYSIS
    FALCONY, C
    ORTIZ, A
    DOMINGUEZ, JM
    FARIAS, MH
    COTAARAIZA, L
    SOTO, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (01) : 267 - 271
  • [50] Improvement of charge trapping characteristics of Al2O3/Al-rich Al2O3/SiO2 stacked films by thermal annealing
    Nakata, Shunji
    Kato, Takashi
    Ozaki, Shinya
    Kawae, Takeshi
    Morimoto, Akiharu
    THIN SOLID FILMS, 2013, 542 : 242 - 245