Online Junction Temperature Measurement Using Peak Gate Current

被引：0
|
作者：
Baker, Nick [1 ]
Munk-Nielsen, Stig [1 ]
Iannuzzo, Francesco [1 ]
Liserre, Marco [2 ]
机构：
[1] Aalborg Univ, Dept Energy Technol, Aalborg, Denmark
[2] Univ Kiel, Chair Power Elect, Kiel, Germany
来源：
2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015) | 2015年
关键词：
Junction Temperature; IGBT; MOSFET; Measurement; Reliability; Power Semiconductors; POWER; MODULES; DEVICES;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. A measurement circuit can be integrated into a gate driver with no disruption to converter operation. The method is immune to dependence on load current, and allows autonomous and high frequency measurements through a measurement circuit directly controlled via the gate signal.
引用
收藏
页码：1270 / 1275
页数：6
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