Fully Integrated Class-J Power Amplifier in Standard CMOS Technology

被引：15
|
作者：
Dong, Yezi [1 ]
Mao, Luhong [1 ]
Xie, Sheng [1 ]
机构：
[1] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Broadband; Class-J; CMOS integrated circuit; harmonic losses; inductor losses;
D O I：
10.1109/LMWC.2016.2630920
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter discusses the integration of Class-J power amplifiers (PA). A set of modified design equations considering harmonic losses is derived and the inductor losses are discussed. Based on the discussion, a fully integrated Class-J PA with stacked-FET structure is designed and implemented in a 0.18 mu m CMOS process. The proposed Class-J PA, powered by a 3.3 V supply, achieves a power-added efficiency (PAE) and drain efficiency (DE) of 43.7% and 45.1%, respectively, with a saturated output power of 22 dBm. Along with a maximum gain of 17.4 dB, the broadband PA exhibits a 3-dB band from 2.1 GHz to 4.8 GHz.
引用
收藏
页码：64 / 66
页数：3
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