Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices

被引：7
|
作者：
Zhou, L [1 ]
Ping, AT [1 ]
Khan, F [1 ]
Osinsky, A [1 ]
Adesida, I [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Microelect Lab, Urbana, IL 61801 USA
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 01期
关键词：
D O I：
10.1049/el:20000028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical characteristics of Ti/Pt/Au contacts on p-type GaN/ A1(x)Ga(1-x)N (x = 0.10 and 0.20) superlattices (SL) have been investigated. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is demonstrated to be an effective ohmic metallisation scheme for GaN/AlxGa1-xN superlattices. A low specific contact resistance of 4.6 x 10(-4) Ohm cm(2) is reported for unalloyed Ti/Pt/Au on an GaN/Al0.2N SL.
引用
收藏
页码：91 / 93
页数：3
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