Degenerate four-wave mixing spectroscopy of GaN films on various substrates

被引：3
|
作者：
Ishiguro, T.
Toda, Y.
Adachi, S.
Mukai, T.
Hoshino, K.
Arakawa, Y.
机构：
[1] Hokkaido Univ, Dept Appl Phys, Kita Ku, Sapporo, Hokkaido, Japan
[2] PRESTO, JST, Kawaguchi, Saitama, Japan
[3] Nichia Corp, NSRL, Tokushima, Japan
[4] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 07期
关键词：
D O I：
10.1002/pssb.200565167
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have carried out time-integrated and spectrally-resolved four-wave mixing (FWM) measurements to study the effects of built-in strain within GaN films on their exciton structures and on their coherent dynamics. Precise values for exciton energies, linewidths, and oscillation periods of quantum beats were presented. Remarkable phase shifts of the quantum beats were observed in the GaN films on a-sapphire, suggesting the exciton-exciton interaction caused by the reduction of the crystal symmetry.
引用
收藏
页码：1560 / 1563
页数：4
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