Simulation of electronic/ionic mixed conduction in solid ionic memories

被引：0
|
作者：
Kwon, Hyuck In [1 ]
Ravaioli, Umberto [1 ]
Lee, Jong Duk [2 ]
机构：
[1] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA
[2] Seoul Natl Univ, Seoul, South Korea
来源：
NONEQUILIBRIUM CARRIER DYNAMICS IN SEMICONDUCTORS PROCEEDINGS | 2006年 / 110卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electronic/ionic mixed conduction phenomena in solid ionic memory devices are investigated. The steady state distributions of electronic carriers and metal chemical potentials within mixed conductors are obtained by numerically solving the Nernst-Plank-Poisson equations. The results are compared with analytical solutions derived under the fixed ion concentration approximation.
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页码：349 / +
页数：2
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