Inspection of alternating PSM reticles using UV-based 365 nm reticle inspection tool

被引：0
|
作者：
Rosenbusch, A [1 ]
Har-zvi, M [1 ]
Gottlib, G [1 ]
机构：
[1] Etec Syst Inc, Appl Mat Co, Hayward, CA 94545 USA
来源：
18TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS | 2002年 / 4764卷
关键词：
phase shift mask; 248 nm AAPSM; i-line inspection; mask inspection; reticle enhancement technique (RET);
D O I：
10.1117/12.479352
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paer presents results of a thorough study using the UV-based die-to-database mask inspection system ARIS(TM) 100i for the inspection of alternating phase shifting masks (AAPSM) designed for KrF (249nm) technology. A specially designed test mask was used to investigate sensitivity limitations of the i-line tool. Main focus is on phase errors. which were treated as a function ot'defect size, phase, and mask location.
引用
收藏
页码：193 / 197
页数：5
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