EUV mask pattern inspection using current DUV reticle inspection tool

被引：10

作者：

Abe, Tsukasa ^{[1
]}

Fujii, Akiko ^{[1
]}

Sasaki, Shiho ^{[1
]}

Mohri, Hiroshi ^{[1
]}

Imai, Hidemichi ^{[1
]}

Takaya, Hironobu ^{[1
]}

Sato, Yasushi ^{[1
]}

Hayashi, Naoya ^{[1
]}

Maenaka, Yumiko ^{[2
]}

机构：

[1] Dai Nippon Printing Co Ltd Japan, 2-2-1 Fukuoka, Fujimino, Saitama 3568507, Japan

[2] KLA Tencor Japan Ltd, Hodogaya Ku, Yokohama, Kanagawa 2400005, Japan

来源：

PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XIV, PTS 1 AND 2 | 2007年 / 6607卷

关键词：

EUVL; EUV; mask; inspection; defect; 65 nm node; 45 nm node;

D O I：

10.1117/12.728935

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

EUV mask pattern inspection was investigated using current DUV reticle inspection tool. Designed defect pattern of 65nm node and 45nm node were prepared. We compared inspection sensitivity between before buffer etch pattern and after buffer etch pattern, and between die to die mode and die to database mode. Inspection sensitivity difference was not observed between before buffer etch pattern and after buffer etch pattern. In addition to defect inspection, wafer print simulation of program defect was investigated. Simulation results were compared to inspection result. We confirmed current DUV reticle inspection tool has potential for EUV mask defect inspection.

引用

页数：7

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