Growth characteristics of SiC in a hot-wall CVD reactor with rotation

被引：15
|
作者：
Zhang, J [1 ]
Forsberg, U [1 ]
Isacson, M [1 ]
Ellison, A [1 ]
Henry, A [1 ]
Kordina, O [1 ]
Janzén, E [1 ]
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 241卷 / 04期
关键词：
crystal morphology; doping; chemical vapor deposition processes; hot wall reactors; semiconducting materials;
D O I：
10.1016/S0022-0248(02)00921-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A version of the hot-wall reactor, where rotation has been added is investigated for the growth of SiC. The capacity of the reactor is 2 in wafers. The rotation is realized by gas foil levitation of a single plate carrying all three wafers. Uniformities of thickness and doping below 1% and 5%, respectively have been obtained. The run to run reproducibility of n-type doping is within +/-10%. The morphology is studied and greatly improved through a modification of the hot-zone, which however made the thickness uniformity marginally worse. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：431 / 438
页数：8
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