Measurement of single interface trap capture cross sections with charge pumping

被引：21

作者：

Saks, NS

机构：

[1] Naval Research Laboratory, Code 6813, Washington

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 25期

关键词：

D O I：

10.1063/1.119177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A technique has been developed using charge pumping to determine electron and hole capture cross sections of individual interface traps in small silicon metal-oxide-semiconductor transistors. Values for both cross sections are approximate to 10(-16) cm(2) for the particular trap measured. (C) 1997 American Institute of Physics.

引用

页码：3380 / 3382

页数：3

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