Effect of margin widths on the residual stress in a multi-layer ceramic capacitor

被引：8

作者：

Park, Jong-Sung

Shin, Hyunho ^{[1
]}

Hong, Kug Sun

Jung, Hyun Suk

Lee, Jung-Kun

Rhee, Kyong-Yop

机构：

[1] Kangnung Natl Univ, Dept Ceram Engn, Seoul 210702, South Korea

[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

[3] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

[4] Kyung Hee Univ, Sch Mech & Ind Syst Engn, Yongin 449701, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 11-12期

关键词：

residual stress; MLCC margin; dielectric properties;

D O I：

10.1016/j.mee.2006.06.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of margin widths on the evolution of residual stress components in a multilayer ceramic capacitor has been investigated numerically by systematically varying the widths of the housing and lateral margins. As for the in-plane residual stress components (compressive), sigma(11) is much relieved by the housing margin which exists along the length (axis 1) direction, while sigma(22) is much relieved by the lateral margin which exists along the width (axis 2) direction. The out-of-plane stress component sigma(33) (tensile) increases via both the housing and lateral margins within the range of the critical width (about 150 mu m), beyond which sigma(33) is not markedly influenced by the widths of margins. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2558 / 2563

页数：6

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