Design of High Efficiency Ka-Band Harmonically Tuned Power Amplifiers

被引：0
|
作者：
Nemati, Hossein Mashad [1 ]
Ferndahl, Mattias [1 ]
Angelov, Iltcho [1 ]
Fager, Christian [1 ]
Zirath, Herbert [1 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci, Microwave Elect Lab, S-41296 Gothenburg, Sweden
来源：
RWS: 2009 IEEE RADIO AND WIRELESS SYMPOSIUM | 2009年
关键词：
mHEMT; power amplifier; Ka-band;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A harmonically tuned power amplifier (PA) design approach is presented to provide high efficiency performance at Ka-band using a GaAs mHEMT device technology. A single-stage monolithic-microwave integrated-circuit (MMIC) class-AB PA is designed and measured. The PA efficiency is optimized for a circuit topology which allows harmonic load impedance terminations up to the third harmonic. An output power of 14 dBm is measured with a small-signal gain of 14 dB and a maximum power-added-efficiency (PAE) of 43%. Good agreement between measurement and simulation results is observed which allows further investigations through harmonic load-pull simulations using the in-house large-signal model of the device. It is shown that the PAE can be further increased to 50% by more careful second and third harmonic load impedance terminations.
引用
收藏
页码：255 / 258
页数：4
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