Temperature dependence of the zero-phonon linewidth in quantum dots:: An effect of the fluctuating environment

被引:68
|
作者
Favero, I.
Berthelot, A.
Cassabois, G.
Voisin, C.
Delalande, C.
Roussignol, Ph.
Ferreira, R.
Gerard, J. M.
机构
[1] Ecole Normale Super, Lab Pierre Aigrain, F-75231 Paris 5, France
[2] UJF, CEA, CNRS, DRFM,CSP2M,Nanophys & Semicond Lab, F-38054 Grenoble 9, France
关键词
D O I
10.1103/PhysRevB.75.073308
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report systematic measurements on the broadening of the emission spectrum of single quantum dots as a function of temperature and incident power. Spectral diffusion effects in the motional narrowing regime provide a quantitative interpretation of our experimental results. We show that, at low incident power, the thermal activation of spectral diffusion results in a Lorentzian zero-phonon line with a width that increases linearly with temperature. Our study provides a unified interpretation to the widely debated issue of the dispersion of the data on the temperature dependence of this zero-phonon linewidth. Our explanation is based on an original model where acoustic phonons interact with carriers outside the quantum dot.
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页数:4
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