Superconducting single-electron transistor coupled to a locally tunable electromagnetic environment

被引:6
|
作者
Lu, W [1 ]
Rimberg, AJ
Maranowski, KD
机构
[1] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.1530731
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed a system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Such tuning can be performed easily, and provides access to a significant range of environmental impedances. For temperatures above 100 mK, we find qualitative agreement between measured changes in the S-SET conductance versus dissipation and a model incorporating electromagnetic fluctuations in both the S-SET leads and the 2DEG. (C) 2002 American Institute of Physics.
引用
收藏
页码:4976 / 4978
页数:3
相关论文
共 50 条
  • [31] THE SINGLE-ELECTRON TRANSISTOR
    KASTNER, MA
    REVIEWS OF MODERN PHYSICS, 1992, 64 (03) : 849 - 858
  • [32] Observation of large conductance oscillations in a superconducting single-electron transistor coupled to a two-dimensional electron gas
    Kurdak, C
    Therrien, R
    Kycia, JB
    Clarke, J
    Campman, KL
    Gossard, AC
    PHYSICA E, 2000, 6 (1-4): : 852 - 855
  • [33] Single-electron transistor backaction on the single-electron box
    Turek, BA
    Lehnert, KW
    Clerk, A
    Gunnarsson, D
    Bladh, K
    Delsing, P
    Schoelkopf, RJ
    PHYSICAL REVIEW B, 2005, 71 (19):
  • [34] Tunable coupled nanomechanical resonators for single-electron transport
    Scheible, DV
    Erbe, A
    Blick, RH
    NEW JOURNAL OF PHYSICS, 2002, 4 : 86.1 - 86.7
  • [35] EFFECT OF THE ELECTROMAGNETIC ENVIRONMENT ON THE SINGLE ELECTRON TRANSISTOR
    INGOLD, GL
    WYROWSKI, P
    GRABERT, H
    ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1991, 85 (03): : 443 - 449
  • [36] Classical dynamics of a nanomechanical resonator coupled to a single-electron transistor
    Armour, AD
    Blencowe, MP
    Zhang, Y
    PHYSICAL REVIEW B, 2004, 69 (12)
  • [37] Transport properties of a resistively-coupled single-electron transistor
    Wakaya, F
    Kitamura, K
    Iwabuchi, S
    Gamo, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2470 - 2472
  • [38] Single-electron transistor coupled to a silicon nano-MOSFET
    Chan, VC
    Buehler, TM
    McCamey, DR
    Ferguson, AJ
    Reilly, DJ
    Yang, C
    Hopf, T
    Dzurak, AS
    Hamilton, AR
    Jamieson, DN
    Clark, RG
    MICRO- AND NANOTECHNOLOGY: MATERIALS, PROCESSES, PACKAGING, AND SYSTEMS II, 2005, 5650 : 89 - +
  • [39] Synchronization effects in a strongly coupled nanomechanical single-electron transistor
    Kolahchi, M. R.
    INTERNATIONAL CONFERENCE ON THEORETICAL PHYSICS 'DUBNA-NANO2008', 2008, 129
  • [40] Capacitively- and resistively-coupled single-electron transistor
    Wakaya, F
    Mandai, S
    Nakamichi, S
    Iwabuchi, S
    Gamo, K
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 195 - 198