A highly integrated terahertz imaging detector with conical extended hemispherical lens antennas

In order to realize the integrated terahertz imaging detector, the on-chip Schottky barrier diodes and lens antennas are studied in this paper. Schottky barrier diode with cut-off frequency of 800 GHz was manufactured by polysilicon gate separation technology in SMIC 180 nm process. A conic extension is used for optimizing the spherical aberration of lenses. The principle is explained by ray-tracing theory, and its model is simulated, optimized and fabricated by nylon. The integrated detector is composed of a lens antenna and a Schottky barrier diodes. The assembled detector is tested at 220GHz, whose response rate of the test result is 130 V/W and the noise equivalent power is 400 pW/root Hz. Using the detector designed in this paper to do the liquid level imaging experiment in the opaque ceramic bottle, the liquid level image is clearly visible, which shows the application potential of terahertz imaging in the field of nondestructive testing.