MoS2 edges and heterophase interfaces: energy, structure and phase engineering

被引:20
|
作者
Zhou, Songsong [1 ]
Han, Jian [1 ]
Sun, Jianwei [2 ]
Srolovitz, David J. [1 ,3 ]
机构
[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[2] Univ Texas El Paso, Dept Phys, El Paso, TX 79968 USA
[3] Univ Penn, Dept Mech Engn & Appl Mech, Philadelphia, PA 19104 USA
来源
2D MATERIALS | 2017年 / 4卷 / 02期
关键词
edges; interfaces; phase transitions; density functional theory calculations; monolayer molybdenum disulfide; GENERALIZED GRADIENT APPROXIMATION; AUGMENTED-WAVE METHOD; SINGLE-LAYER MOS2; DICHALCOGENIDE MONOLAYERS; ELECTRONIC TRANSPORT; BASIS-SET; TRANSITION; HETEROSTRUCTURES; TRANSISTORS; EVOLUTION;
D O I
10.1088/2053-1583/aa6d22
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The transition metal dichalcogenides exhibit polymorphism; i.e. both 2H and 1T' crystal structures, each with unique electronic properties. These two phases can coexist within the same monolayer microstructure, producing 2H/1T' interfaces. Here we report a systematic investigation of the energetics of the experimentally most important MoS2 heterophase interfaces and edges. The stable interface and edge structures change with chemical potential (these edges/interfaces are usually non-stoichiometric). Stable edges tend to be those of highest atomic density and the stable interfaces correspond to those with local atomic structure very similar to the 2H crystal. The interfacial energies are lower than those of the edges, and the 1T' edges have lower energy than the 2H edges. Because the 1T' edges have much lower energy than the 2H edges, a sufficiently narrow 1T' ribbon will be more stable than the corresponding 2H ribbon (this critical width is much larger in MoTe2 than in MoS2). Similarly, a large 2H flake have an equilibrium strip of 1T' along its edge (again this effect is much larger in MoTe2 than in MoS2). Application of tensile strains can increase the width of the stable 1T' strip or the critical thickness below which a ribbon favors the 1T' structure. These effects provide a means to phase engineer transition metal dichalcogenide microstructures.
引用
收藏
页数:10
相关论文
共 50 条
  • [31] First principles prediction on the interfaces of Fe/MoS2, Co/MoS2 and Fe3O4/MoS2
    Yin, M. Y.
    Wang, X. C.
    Mi, W. B.
    Yang, B. H.
    COMPUTATIONAL MATERIALS SCIENCE, 2015, 99 : 326 - 335
  • [32] Evolutions of 3D MoS2 nano-islands on monolayer MoS2 edges under low-energy ion irradiation
    Arunachalam, Harish Nanda
    Perarasan, T.
    Durairaj, Santhosh
    Sinha, Jaivardhan
    Eswaran, Senthil Kumar
    Chandramohan, S.
    Tripathi, Jitendra Kumar
    JOURNAL OF MATERIALS SCIENCE, 2025, : 3863 - 3879
  • [33] Boosting Hydrogen Evolution Performance of MoS2 by Band Structure Engineering
    Li, Jing
    Kang, Jiahao
    Cai, Qian
    Hong, Wenting
    Jian, Chuanyong
    Liu, Wei
    Banerjee, Kaustav
    ADVANCED MATERIALS INTERFACES, 2017, 4 (16):
  • [34] Engineering the Edges of MoS2 (WS2) Crystals for Direct Exfoliation into Monolayers in Polar Micromolecular Solvents
    Hai, Xiao
    Chang, Kun
    Pang, Hong
    Li, Mu
    Li, Peng
    Liu, Huimin
    Shi, Li
    Ye, Jinhua
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2016, 138 (45) : 14962 - 14969
  • [35] Engineering the Edges of MoS2 (WS2) Crystals for Direct Exfoliation into Monolayers in Polar Micromolecular Solvents
    Chang, Kun (Chang.Kun@nims.go.jp), 1600, American Chemical Society (138):
  • [36] Insight into the growth behaviors of MoS2 nanograins influenced by step edges and atomic structure of the substrate
    Shuangyue Wang
    Ni Yang
    Mengyao Li
    Ji Zhang
    Ashraful Azam
    Yin Yao
    Xiaotao Zu
    Liang Qiao
    Peter Reece
    John Stride
    Jack Yang
    Sean Li
    Nano Research, 2022, 15 (8) : 7646 - 7654
  • [37] Phase Engineering Modulates the Electronic Structure of the IrO2/MoS2 Heterojunction for Efficient and Stable Water Splitting
    Sun, Shougang
    Wan, Ziqi
    Xu, Yingying
    Zhou, Xuemei
    Gao, Wei
    Qian, Jinjie
    Gao, Jie
    Cai, Dong
    Ge, Yongjie
    Nie, Huagui
    Yang, Zhi
    ACS NANO, 2025, 19 (12) : 12090 - 12101
  • [38] Insight into the growth behaviors of MoS2 nanograins influenced by step edges and atomic structure of the substrate
    Wang, Shuangyue
    Yang, Ni
    Li, Mengyao
    Zhang, Ji
    Azam, Ashraful
    Yao, Yin
    Zu, Xiaotao
    Qiao, Liang
    Reece, Peter
    Stride, John
    Yang, Jack
    Li, Sean
    NANO RESEARCH, 2022, 15 (08) : 7646 - 7654
  • [39] Structural and Electronic Optimization of MoS2 Edges for Hydrogen Evolution
    Wang, Hao
    Xiao, Xu
    Liu, Shuyuan
    Chiang, Chao-Lung
    Kuai, Xiaoxiao
    Peng, Chun-Kuo
    Lin, Yu-Chang
    Meng, Xing
    Zhao, Jianqing
    Choi, Jinho
    Lin, Yan-Gu
    Lee, Jong-Min
    Gao, Lijun
    Journal of the American Chemical Society, 2019, 141 (46): : 18578 - 18584
  • [40] One-dimensional electronic instabilities at the edges of MoS2
    Krishnamurthi, Sridevi
    Farmanbar, Mojtaba
    Brocks, Geert
    PHYSICAL REVIEW B, 2020, 102 (16)