Influence of geometrical parameters on speed characteristics of intracavity-contacted oxide-confined VCSELs

被引：0
|
作者：
Lysak, V. V. [1 ]
Lee, Yong Tak [1 ]
机构：
[1] Gwangju Inst Sci & Technol, DIC, 1 Oryong Dong, Gwangju 500712, South Korea
来源：
OPTOELETRONIC MATERIALS AND DEVICES, PTS 1 AND 2 | 2006年 / 6352卷
关键词：
dC characteristics; intracavity-contacted oxide-confined vertical-cavity surface-emitting laser; modulation bandwidth;
D O I：
10.1117/12.688080
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents complete 2D electro-opto-thermal simulation of the intracavity contacted oxide confined vertical cavity surface emitting lasers (ICOC VCSEL). The analysis represents the influence of geometrical parameters on power and modulation properties on such devices. The optimized values with maximum of modulation bandwidth are presented.
引用
收藏
页数：7
相关论文
共 50 条
  • [41] The fabrication and lasing characteristics of oxide-confined 795 nm VCSELs with close and open isolation trenches
    Y. R. Sun
    J. R. Dong
    Y. M. Zhao
    S. Z. Yu
    Y. He
    J. Huang
    Optical and Quantum Electronics, 2017, 49
  • [42] The fabrication and lasing characteristics of oxide-confined 795 nm VCSELs with close and open isolation trenches
    Sun, Y. R.
    Dong, J. R.
    Zhao, Y. M.
    Yu, S. Z.
    He, Y.
    Huang, J.
    OPTICAL AND QUANTUM ELECTRONICS, 2017, 49 (11)
  • [43] Threshold Current Characteristics of Intracavity-contacted Vertical-cavity Surface-emitting Laser
    QU Hong-wei
    SemiconductorPhotonicsandTechnology, 2005, (02) : 81 - 84
  • [44] Nonlinear distortion reduction in transverse mode stabilized oxide-confined VCSELs
    Carlsson, C
    Martinsson, H
    Vukusic, J
    Halonen, J
    Larsson, A
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (05) : 520 - 522
  • [45] High-Speed and Temperature-Stable, Oxide-Confined 980-nm VCSELs for Optical Interconnects
    Wolf, Philip
    Moser, Philip
    Larisch, Gunter
    Hofmann, Werner
    Bimberg, Dieter
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (04)
  • [46] Oxide-confined VCSELs fabricated with a simple self-aligned process flow
    Marigo-Lombart, L.
    Calvez, S.
    Arnoult, A.
    Thienpont, H.
    Panajotov, K.
    Almuneau, G.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (12)
  • [47] High-speed characteristics of vertical cavity surface emitting lasers and resonant-cavity-enhanced photodetectors based on intracavity-contacted structure
    Song, Y. M.
    Jeong, B. K.
    Na, B. H.
    Chang, K. S.
    Yu, J. S.
    Lee, Y. T.
    APPLIED OPTICS, 2009, 48 (25) : F11 - F17
  • [48] Theoretical optimization of transverse waveguiding in oxide-confined VCSELs with internal photonic crystals
    Ivanov, Pavel
    Rorison, Judy
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2009, 26 (12) : 2461 - 2468
  • [49] Electrical-thermal-optical simulation of GaAs/AlGaAs oxide-confined VCSELs
    Smagley, VA
    Min, L
    Smolyakov, GA
    Eliseev, PG
    Osinski, M
    Riely, BP
    Shen, PH
    Simonis, GJ
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XI, 2003, 4986 : 332 - 342
  • [50] An iterative model for the steady-state current distribution in oxide-confined VCSELs
    Chuang, Hsueh-Hua
    Biard, James R.
    Guenter, Jim
    Johnson, Ralph
    Evans, Gary A.
    Butler, Jerome K.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) : 1028 - 1040
12345